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| VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg M1 M2 M3 Conditions VGE = 0 V, Tvj 25 C Tc = 80 C tp = 1 ms, Tc = 80 C min max 1700 1800 3600 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) 20 11000 1800 3600 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 16500 10 4000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 1800E170100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 1800 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1700 2.0 2.3 typ max Unit V 2.3 2.6 50 2.6 2.9 12 120 500 6.5 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 1800 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 1800 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, VGE = 15 V, RG = 0.82 , L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, VGE = 15 V, RG = 0.82 , L = 60 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C -500 4.5 15.1 166 16.5 6.98 290 300 230 250 920 1000 215 230 380 nF ns ns ns ns Turn-on switching energy Eon mJ 550 560 mJ 700 8500 10 A nH m Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1200 V, VCEM CHIP 1700 V TC = 25 C TC = 125 C 0.06 0.085 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 2 of 9 5SNA 1800E170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Conditions IF = 1800 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 900 V, IF = 1800 A, VGE = 15 V, RG = 0.82 L = 60 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1.4 1.4 typ 1.65 1.7 1140 1460 440 780 590 890 310 540 max 2.0 2.0 Unit V A C ns mJ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties Parameter IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heatsink 2) 2) Symbol Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) Conditions min typ max Unit 0.009 K/W 0.017 K/W per module, grease = 1W/m x K 0.006 K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions Clearance distance Surface creepage distance Weight Symbol LxW DC DSC x Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: min 23 19 33 32 typ max Unit mm mm mm H Typical , see outline drawing 190 x 140 x 38 1380 g ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 3 of 9 5SNA 1800E170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 4 of 9 5SNA 1800E170100 3600 3200 25 C 2800 125 C 2400 2000 1600 1200 800 400 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5 3600 VGE = 25 V 3200 2800 2400 2000 1600 1200 125 C 800 25 C 400 0 0 1 2 3 4 5 6 VGE [V] 7 8 9 10 11 12 IC [A] Fig. 1 Typical on-state characteristics, chip level Fig. 2 IC [A] Typical transfer characteristics, chip level 3600 3200 2800 2400 2000 1600 1200 800 400 Tvj = 25 C 0 0 1 2 3 VCE [V] 4 5 6 17V 15V 13V 11V IC [A] 9V 3600 3200 2800 2400 11V 2000 1600 1200 800 400 Tvj = 125 C 0 0 1 2 3 VCE [V] 4 5 6 9V 17V 15V 13V IC [A] Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 5 of 9 5SNA 1800E170100 2.0 VCC = 900 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 60 nH Eoff Eon, Eoff [J] Eon, Eoff [J] 3 VCC = 900 V IC = 1800 A VGE = 15 V Tvj = 125 C L = 60 nH Eon 2.5 1.5 2 1.0 Eon 1.5 Eoff 1 0.5 0.5 E sw [J] = 1.6 x 10 -7 x I C 2 + 2.6 x 10 -4 x I C + 0.27 0.0 0 1000 2000 IC [A] 3000 4000 0 0 2 4 RG [ohm] 6 8 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 VCC = 900 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 60 nH td(on), tr, td(off), tf [s] td(on),tr, td(off), tf [s] 10 VCC = 900V IC = 1800 A VGE = 15 V Tvj = 125 C L = 60 nH td(off) 1 td(off) 1 tr td(on) tf td(on) tf tr 0.1 0 1000 2000 IC [A] 3000 4000 0.1 0 2 4 RG [ohm] 6 8 Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 6 of 9 5SNA 1800E170100 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies 15 VCC = 900 V 100 VCC = 1300 V VGE [V] C [nF] Coes 10 10 Cres 5 IC = 1800 A Tvj = 25 C 1 0 5 10 15 20 VCE [V] 25 30 35 0 0 2 4 6 8 Qg [C] 10 12 14 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 1200 V, Tvj = 125 C VGE = 15 V, RG = 0.82 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 VCE [V] 1500 2000 Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 7 of 9 5SNA 1800E170100 800 700 600 500 Erec [mJ] 400 300 Erec 200 100 E rec [mJ] = -6 x 10 -5 x I F 2 + 0.371 x I F + 65 1600 Irr 1400 1200 Erec [mJ], Qrr [C] 1000 800 600 VCC = 900 V RG = 0.82 ohm Tvj = 125 C L = 60 nH 400 200 0 0 1000 2000 IF [A] 900 800 700 600 500 RG = 2.2 ohm 1800 Irr 1600 1400 Qrr RG = 0.82 ohm Qrr [C], Irr [A] RG = 0.56 ohm Qrr 1200 1000 800 600 VCC = 900 V IF = 1800 A Tvj = 125 C L = 60 nH 5 6 7 8 9 10 400 200 0 400 300 200 100 0 1 2 3 4 RG = 6.8 ohm RG = 3.9 ohm Erec 0 3000 4000 RG = 5.6 ohm di/dt [kA/s] Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3600 3200 2800 2400 2000 1600 25C 125C 4000 3600 3200 2800 2400 VCC 1200 V di/dt 9000 A/s Tvj = 125 C IF [A] IR [A] 2000 1600 1200 800 400 0 0 0.5 1 VF [V] 1.5 2 2.5 1200 800 400 0 0 500 1000 VR [V] 1500 2000 Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 8 of 9 RG = 1.5 ohm Irr [A] 5SNA 1800E170100 0.1 Analytical function for transient thermal impedance: Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode 0.01 Zth(j-c) IGBT Z th (j-c) (t) = R i (1 - e -t/ i ) i =1 2 1.73 20.4 2.91 29.3 i IGBT n 1 6.24 192 11.6 204 3 0.704 1.97 1.28 6.96 4 0.345 0.52 1.27 1.5 5 Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA 1554-03 Nov. 04 |
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